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cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 1/11 MTP4435H8 cystek product specification p-channel enhancement mode power mosfet MTP4435H8 bv dss -30v i d @v gs =-10v, t c =25 c -41a i d @v gs =-10v, t a =25 c -8.8a v gs =-10v, i d =-20a 11m r dson(typ) v gs =-4.5v, i d =-12a 14.3m features ? single drive requirement ? low on-resistance ? fast switching characteristic ? pb-free lead plating and halogen-free package symbol outline MTP4435H8 dfn5 6 pin 1 d ordering information device package shipping MTP4435H8-0-t6-g dfn5 6 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel g gate d drain s source environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pcs / tape & reel,13? reel product rank, zero for no rank products product name s s s g d d d d s d d d s g s pin 1
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 2/11 MTP4435H8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol 10s steady state unit drain-source voltage v ds -30 gate-source voltage v gs 25 v continuous drain current @ t c =25 c, v gs =-10v (note1) -41 continuous drain current @ t c =100c, v gs =-10v (note1) i d -26 continuous drain current @ t a =25 c, v gs =-10v (note2) -14.9 -8.8 continuous drain current @ t a =70 c, v gs =-10v (note2) i dsm -11.9 -7.0 pulsed drain current (note3) i dm -164 avalanche current@l=0.1mh (note4) i as -41 a avalanche energy @ l=1mh, i d =-18a, v dd =-15v (note4) e as 162 mj t c =25 (note1) 42 t c =100 (note1) p d 16.8 t a =25 c (note2) 5.4 1.9 total power dissipation t a =70 c (note2) p dsm 3.4 1.2 w operating junction and storage temperature range tj, tstg -55~+150 c thermal data parameter symbol typical maximum unit thermal resistance, junction-to-case r th,j-c 2.5 3 t 10s 18 23 thermal resistance, junction-to-ambient (note2) steady state r th,j-a 50 65 c/w note : 1 . the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and is more useful in setting the upper di ssipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user?s specific board design. 3 . pulse width limited by junction temperature t j(max) =150 c. 4. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 100% tested by conditions of l=0.1mh, i as =-10a, v gs =-10v, v dd =-15v. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v gs =0v, i d =-250 a v gs(th) -1 - -2.5 v v ds = v gs , i d =-250 a g fs *1 - 13 - s v ds =-10v, i d =-5a i gss - - 100 na v gs = 25v, v ds =0v - - -1 v ds =-24v, v gs =0v i dss - - -10 a v ds =-24v, v gs =0, tj=70 c - 11 14 v gs =-10v, i d =-20a r ds(on) *1 - 14.3 19 m v gs =-4.5v, i d =-12a
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 3/11 MTP4435H8 cystek product specification dynamic *4 ciss - 2288 - coss - 234 - crss - 157 - pf v ds =-15v, v gs =0v, f=1mhz qg *1, 2 - 46.2 - qgs *1, 2 - 6.8 - qgd *1, 2 - 8.6 - nc v ds =-15v, v gs =-10v, i d =-20a t d(on) *1, 2 - 10.6 - tr *1, 2 - 15.6 - t d(off) *1, 2 - 90.4 - t f *1, 2 - 31.2 - ns v ds =-15v, i d =-20a, v gs =-10v r g =3.3 source-drain diode v sd *1 - -0.89 -1.2 v i s =-20a, v gs =0v trr - 13.4 - ns qrr - 7.1 - nc i f =-20a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. *4.guaranteed by design, not subject to production testing.
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 4/11 MTP4435H8 cystek product specification typical characteristics typical output characteristics 0 10 20 30 40 50 60 70 80 90 100 024681 0 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage -v ds , drain-source voltage(v) -i d , drain current(a) 10v,9v,8v,7v,6v,5v 4 v 3 v i d =-250 a, v gs =0v 2.5 v -v =2v gs static drain-source on-state resistance vs drain current 10 100 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v v gs =-10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1.0 1.2 0246810 -i dr , reverse drain current(a) -v sd , source-drain voltage(v) v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 024681 0 drain-source on-state resistance vs junction tempearture 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =-10v, i d =-20a r ds( on) @ tj=25c : 11m (typ.) -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-20a
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 5/11 MTP4435H8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage i d =-250 a i d =-1ma maximum safe operating area 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s r dson limited t a =25c, v gs =-10v,tj=150c r ja =65c/w, single pulse 1s gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-20a v ds =-20v v ds =-15v maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v, r ja =65c/w forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =-10v v ds =-15v
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 6/11 MTP4435H8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 70 80 90 100 012345 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =-10v single pulse maximum power dissipation 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =65c/w maximum drain current vs case temperature 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175 t c , case temperature(c) -i d , maximum drain current(a) v gs =-10v, r jc =3c/w maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s r dson limited t c =25c, v gs =-10v,tj=150c r jc =3c/w, single pulse single pulse maximum power dissipation 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =150c t c =25c r jc =3c/w power derating curve 0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 175 t c , case temperature() p d , power dissipation(w)
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 7/11 MTP4435H8 cystek product specification typical characteristics(cont.) transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =65c/w transient thermal response curves 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =3 c/w
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 8/11 MTP4435H8 cystek product specification recommended soldering footprint & stencil design unit : mm
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 9/11 MTP4435H8 cystek product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 10/11 MTP4435H8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6c/second max. 6 minutes max. 8 minutes max. time 25 c to peak temperature note :1. all temperatures refer to topside of the package, measured on the package body surface. 2.for devices mounted on fr-4 pcb of 1.6mm or equivalent grade pcb. if other grade pcb is used, care should be taken to match the coeffi cients of thermal expansion betw een components and pcb. if they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools.
cystech electronics corp. spec. no. : c391h8 issued date : 2017.02.15 revised date : page no. : 11/11 MTP4435H8 cystek product specification dfn5 6 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.000 0.035 0.039 k 1.190 1.390 8-lead dfn5 6 plastic package cys package code : h8 device code 4435 date code marking : 0.047 0.055 a3 0.254 ref 0.010 ref b 0.350 0.450 0.014 0.018 d 4.944 5.096 0.195 0.201 e 1.270 typ. 0.050 typ. e 5.974 6.126 0.235 0.241 l 0.559 0.711 0.022 0.028 d1 3.910 4.110 0.154 0.162 l1 0.424 0.576 0.017 0.023 e1 3.375 3.575 0.133 0.141 h 0.574 0.726 0.023 0.029 d2 4.824 4.976 0.190 0.196 10 12 10 12 e2 5.674 5.826 0.223 0.229 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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